Gareth Sampson specializes in chemical, semiconductor, and materials processing. He serves as a Registered Patent Agent.
Dr. Sampson graduated with High Honor from the Georgia Institute of Technology with a Bachelors in Chemical Engineering in 1992, receiving an Honorable Mention Award for a National Science Foundation Graduate Fellowship.
Dr. Sampson received his Ph.D. in Chemical Engineering from the University of Texas at Austin in 1998. During this time he designed and constructed a high vacuum reaction and analysis chamber to study atom and ion reactions with silicon surfaces. His doctoral research focused on hydrogen atom and argon ion reactions for the removal of carbon-based adsorbates on silicon surfaces. Dr. Sampson authored two publications that have appeared in scientific journals. Dr. Sampson is a member of the Golden Key National Honor Society and the American Chemical Society.